Text: "Observation of a novel electron paramagnetic resonance in germanium containing dislocations." The first observation of electron paramagnetic resonance at electrons at dislocations in n-type germanium is reported. Under optical excitation two sets of lines are detected, which are inverted in sign from normal EPR absorption and persist for hours after the excitation, indicating an extraordinarily long-lived excited state. This is "negative absorption" and is of interest to researchers attempting to tap zero-point energy of vacuum. Very similar to effects that T. Henry Moray obtained in his original amorphous semiconductors containing a mix of finely ground germanium and other materials. The stress relief at dislocations produce small scalar interferometers, just as is produced in the earth on a larger scale at fault zones. Physical Review Letters. 47(25), Dec. 21, 1981. p. 1859-1862.

See Also: electron paramagnetic resonance, amorphous semiconductors, anomalous phenomena, germanium, negative absorption, semiconductor anomalies, Moray device, free energy devices.

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