Re: Cold Fusion
Meat Truck ( (no email) )
Fri, 16 Oct 1998 23:26:36 -0500
FAST RECOVERY DIODES;
VARO SEMICONDUCTOR.INC
GARLAND, TEXAS
I am trying these diodes out as published spec.s of 250 nanosec
recovery time on a binary resonant high freq circuit of 166,000 hz.
For my test application I am using a series electrolysis baking soda
cell.
For those not familiar with fast recovery diodes I thought the companies
application notes would be of interest to all.
Reverse Recovery Time: The period of time required for a silicon
rectitifier to develope its blocking ability after switching from forward
conduction is termed "reverse recovery time".
A silicon rectifier cannot make an instantaneous switch from forward
conduction to reverse blocking. For a momentary period, prior to full
blocking, the rectifier is a short circuit, conducting current freely in
the wrong direction while the electrical charge that has been built up by
forward conduction is "swept out."
In typical slow recovery silicon rectifiers, the time required for the
rectifier to recover and perform its blocking function may be from 5 to 50
microseconds.
Basic process changes must be introduced in device manufacture in
order to produce a rectifier with fast recovery characteristics. The most
common technique is diffusion of minute quantities of gold into the silicon
junction structure before actual device fabrication.
I hope more people on the lists take the time to present helpful info
to all of us here.
Sincerely Harvey Norris mnorris@akron.infi.net